Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode

Cheng Hung Wu, Kuan Chi Wang, Yu Yun Wang, Chenming Hu, Chun-Jung Su*, Tian-Li Wu

*此作品的通信作者

研究成果: Article同行評審

摘要

In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.

原文English
文章編號468
頁(從 - 到)1-8
頁數8
期刊Nanomaterials
12
發行號3
DOIs
出版狀態Published - 1 2月 2022

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