Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode

Cheng Hung Wu; Kuan Chi Wang; Yu Yun Wang; Tian-Li Wu; Chun-Jung Su; Y. J. Lee; C.  Hu

Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode

Cheng Hung Wu, Kuan Chi Wang, Yu Yun Wang, Tian-Li Wu^*, Chun-Jung Su, Y. J. Lee, C. Hu

^*此作品的通信作者

研究成果: Paper › 同行評審

摘要

In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.

原文	English
出版狀態	Published - 9月 2021
事件	International Conference on Solid State Devices and Materials (SSDM) - 持續時間: 6 9月 2021 → 9 9月 2021

Conference

Conference	International Conference on Solid State Devices and Materials (SSDM)
期間	6/09/21 → 9/09/21

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@conference{b0fe3c7f6bc34bbea4767895ca5b1de1,

title = "Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode",

abstract = "In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.",

author = "Wu, {Cheng Hung} and Wang, {Kuan Chi} and Wang, {Yu Yun} and Tian-Li Wu and Chun-Jung Su and Lee, {Y. J.} and C. Hu",

year = "2021",

month = sep,

language = "English",

note = "International Conference on Solid State Devices and Materials (SSDM) ; Conference date: 06-09-2021 Through 09-09-2021",

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TY - CONF

T1 - Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode

AU - Wu, Cheng Hung

AU - Wang, Kuan Chi

AU - Wang, Yu Yun

AU - Wu, Tian-Li

AU - Su, Chun-Jung

AU - Lee, Y. J.

AU - Hu, C.

PY - 2021/9

Y1 - 2021/9

N2 - In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.

AB - In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.

M3 - Paper

T2 - International Conference on Solid State Devices and Materials (SSDM)

Y2 - 6 September 2021 through 9 September 2021

ER -

Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode

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