摘要
We report a superlattice (SL) with multiple stacks of multiquantum barriers (MQB), which can reflect electrons more effectively than with a single stack of MQB. The reflectivities are calculated and compared with one another for a variety of potential barrier structures. The multistack SL has a wider energy spectrum within which electrons are reflected. Four types of n-GaAs/i-barrier/n-GaAs diodes were fabricated to confirm the calculated results. The current-voltage characteristics measured at 77 K for these diodes show that the turn-on voltage increases with the number of stacks of MQBs in the SL. This is in agreement with our calculated results.
原文 | English |
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頁(從 - 到) | 1108-1110 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 64 |
發行號 | 9 |
DOIs | |
出版狀態 | Published - 1994 |