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Enhancement of detection by selective modification of silicon nanobelt field-effect transistors via localized Joule heating
Hao Heng Liu, Tzung Han Lin,
Jeng-Tzong Sheu
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材料科學與工程學系
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引文 斯高帕斯(Scopus)
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Keyphrases
3-Aminopropyltrimethoxysilane
25%
Ablating
50%
Ablation
25%
Biotin
25%
Fast Sensing
25%
Field-effect Transistors
100%
Fluorescence Imaging
25%
Gate Dielectric
25%
High Sensitivity
25%
Impact Ionization
25%
Ionization Mechanism
25%
Joule Heating
100%
Lateral Force Microscopy
25%
Leakage Current
25%
Limit of Detection
25%
Local Joule Heating
100%
Methoxy
50%
Polyethylene Glycol
50%
Polystyrene Nanoplastics (PS-NPs)
25%
Pulse Voltage
50%
Real-time Detection
50%
Response Rate
50%
Selective Modification
100%
Sensing Response
50%
Silane
25%
Silane-modified
25%
Silicon Nanobelt
100%
Streptavidin
50%
Target Concentration
25%
Material Science
Dielectric Material
50%
Field Effect Transistor
100%
Nanoribbon
100%
Polyethylene Glycol
100%
Silane
100%
Silicon
100%
Chemical Engineering
Joule Heating
100%
Nanobelts
100%
Polyethylene Glycol
33%
Silane
33%
Engineering
Field-Effect Transistor
100%
Gate Dielectric
16%
Impact Ionization
16%
Lateral Force
16%
Resistance Heating
100%