Enhancement of bonding strength for low temperature Si3N4/Si3N4 direct wafer bonding by nitrogen-plasma activation and hydrofluoric pre-dip

F. S. Lo, C. C. Chiang, C. Li, T. H. Lee

研究成果: Conference contribution同行評審

摘要

Prior to exposing to plasma for surface activation, dipping the silicon nitride (Si3N4) surfaces on one pair of silicon wafers in diluted hydrofluoric (HF) solution is for the sake of low temperature wafer bonding. We found the bonding strength reaches the level of silicon fracture (2,500 mJ/m2) through a 200°C annealing less than 24 hours compared with 400 hours done by HF-dip merely. We suggest the bonding mechanism as following: the HF-dip treatment passivated the Si dangling Si bonds on the broken Si-N network of the Si3N4 surface to form sufficient high density of Si-H bonds. And then the application of N2 plasma treatment can increase the density of Si-H-N bonds for forming hydrogen bonds between the two mating surfaces to bridge the two bonding surfaces resulting in high bonding strength after annealing.

原文English
主出版物標題Semiconductor Wafer Bonding 13
主出版物子標題Science, Technology, and Applications
編輯T. Suga, M. S. Goorsky, R. Knechtel, H. Moriceau, H. Baumgart, C. S. Tan, K. D. Hobart
發行者Electrochemical Society Inc.
頁面111-117
頁數7
版本5
ISBN(電子)9781607685395
DOIs
出版狀態Published - 2014
事件13th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
持續時間: 5 10月 20149 10月 2014

出版系列

名字ECS Transactions
號碼5
64
ISSN(列印)1938-6737
ISSN(電子)1938-5862

Conference

Conference13th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications - 2014 ECS and SMEQ Joint International Meeting
國家/地區Mexico
城市Cancun
期間5/10/149/10/14

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