Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure

Ting Chang Chang, Po-Tsun Liu, Ya Liang Yang, Jung Chih Hu, Simon M. Sze

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.

原文English
頁(從 - 到)L82-L85
期刊Japanese Journal of Applied Physics, Part 2: Letters
39
發行號2 A
DOIs
出版狀態Published - 2月 2000

指紋

深入研究「Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure」主題。共同形成了獨特的指紋。

引用此