Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer

Ping Yu Tsai, Hoang Tan Ngoc Nguyen, Venkatesan Nagarajan, Chun Hsiung Lin, Chang Fu Dee, Shih Chen Chen, Hao Chung Kuo, Ching Ting Lee, Edward Yi Chang

研究成果: Article同行評審

摘要

A high frequency enhancement mode quaternary InAlGaN/GaN MIS-HEMT with recessed gate (Lg = 150 nm) processed using an oxygen-based digital etching technique is presented. The digital etching was performed by cyclic ICP oxygen treatment to oxidize InAlGaN barrier and HCl wet etching to remove the oxidized layer. In this study, we have demonstrated that the threshold voltage can be adjusted in a wide-range from depletion mode to enhancement mode with a nanometer scale gate for high frequency InAlGaN/GaN MIS-HEMT using the digital etching technique. In addition, the etch rate can be controlled from 0.7 nm/cycle to 3.6 nm cycle−1 with RF bias power changing from 0 W to 40 W with high flexibility in etching rate. The post-etching surface roughness was around 0.12 nm regardless of the ICP oxidation voltage. The enhancement-mode InAlGaN quaternary GaN HEMT with maximum drain current of 955 mA mm−1, gm−1 peak of 440 mS mm−1, Vth of 0.2 V, and ft/fmax of 45/59 GHz were achieved using the digital etching for the gate recess structure.

原文English
文章編號085005
期刊ECS Journal of Solid State Science and Technology
11
發行號8
DOIs
出版狀態Published - 8月 2022

指紋

深入研究「Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer」主題。共同形成了獨特的指紋。

引用此