Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor

Pei Kang Chung; Shun-Tung Yen

doi:10.1063/1.4901331

Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor

Pei Kang Chung
, Shun-Tung Yen

電子研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13μW and a power conversion efficiency higher than a resistor by more than 20%.

原文	English
文章編號	183101
期刊	Journal of Applied Physics
卷	116
發行號	18
DOIs	https://doi.org/10.1063/1.4901331
出版狀態	Published - 1 11月 2014

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10.1063/1.4901331

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abstract = "We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13μW and a power conversion efficiency higher than a resistor by more than 20\%.",

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AB - We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13μW and a power conversion efficiency higher than a resistor by more than 20%.

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Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor

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