Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor

We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13μW and a power conversion efficiency higher than a resistor by more than 20%.