@inproceedings{21609494f6fb4df3a5420218c644d828,
title = "Enhanced Reliability and Wake-Up Free Behavior of HfO2/ZrO2 Superlattice FeRAM with Triple-Level Cell Using High- and Low-Temperature ALD Stacks",
abstract = "A novel bilayer superlattice (SL) HfxZr1-x O2 (HZO) stack is proposed to integrate the high endurance of low-temperature ALD (LTD) with the high polarization of high-temperature ALD (HTD). The optimized 5-nm HTD-SL/5-nm LTD-SL (H/LTD) structure exhibits wake-up free behavior and reduced fatigue effect. The FeCAPs achieved 3 bit/cell operation with 8 distinct and non-overlapping stable states after 108 cycles. These results suggest that our bilayer SL-HZO is a promising candidate for high-performance embedded FeRAM.",
author = "Huang, \{Kuan Wen\} and Lin, \{Kun Tao\} and Wang, \{Yu Yun\} and Chao, \{Tien Sheng\}",
note = "Publisher Copyright: {\textcopyright} 2025 Japan Society of Applied Physics.; 2025 Silicon Nanoelectronics Workshop, SNW 2025 ; Conference date: 08-06-2025 Through 09-06-2025",
year = "2025",
doi = "10.23919/SNW65111.2025.11097259",
language = "English",
series = "2025 Silicon Nanoelectronics Workshop, SNW 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "42--43",
booktitle = "2025 Silicon Nanoelectronics Workshop, SNW 2025",
address = "美國",
}