Enhanced performance of poly-Si thin film transistors using fluorine ions implantation

Chun Hao Tu; Ting Chang Chang; Po-Tsun Liu; Hsiao-Wen Zan; Ya-Hsiang Tai; Che Yu Yang; Yung Chun Wu; Hsin Chou Liu; Wei Ren Chen; Chun Yen Chang

doi:10.1149/1.1996508

Enhanced performance of poly-Si thin film transistors using fluorine ions implantation

Chun Hao Tu^*, Ting Chang Chang, Po-Tsun Liu, Hsiao-Wen Zan, Ya-Hsiang Tai, Che Yu Yang, Yung Chun Wu, Hsin Chou Liu, Wei Ren Chen, Chun Yen Chang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

摘要

Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as I _ON/I_OFF ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is 53.82 cm²/V-s, and higher than 19.74 cm ²/V-s in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly-Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes.

原文	English
頁（從 - 到）	G246-G248
期刊	Electrochemical and Solid-State Letters
卷	8
發行號	9
DOIs	https://doi.org/10.1149/1.1996508
出版狀態	Published - 2005

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title = "Enhanced performance of poly-Si thin film transistors using fluorine ions implantation",

abstract = "Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as I ON/IOFF ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is 53.82 cm2/V-s, and higher than 19.74 cm 2/V-s in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly-Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes.",

author = "Tu, {Chun Hao} and Chang, {Ting Chang} and Po-Tsun Liu and Hsiao-Wen Zan and Ya-Hsiang Tai and Yang, {Che Yu} and Wu, {Yung Chun} and Liu, {Hsin Chou} and Chen, {Wei Ren} and Chang, {Chun Yen}",

year = "2005",

doi = "10.1149/1.1996508",

language = "English",

volume = "8",

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journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Enhanced performance of poly-Si thin film transistors using fluorine ions implantation

AU - Tu, Chun Hao

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Zan, Hsiao-Wen

AU - Tai, Ya-Hsiang

AU - Yang, Che Yu

AU - Wu, Yung Chun

AU - Liu, Hsin Chou

AU - Chen, Wei Ren

AU - Chang, Chun Yen

PY - 2005

Y1 - 2005

N2 - Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as I ON/IOFF ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is 53.82 cm2/V-s, and higher than 19.74 cm 2/V-s in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly-Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes.

AB - Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as I ON/IOFF ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is 53.82 cm2/V-s, and higher than 19.74 cm 2/V-s in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly-Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes.

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DO - 10.1149/1.1996508

M3 - Article

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SN - 1099-0062

VL - 8

SP - G246-G248

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Enhanced performance of poly-Si thin film transistors using fluorine ions implantation

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