摘要
An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.
原文 | English |
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文章編號 | 181117 |
期刊 | Applied Physics Letters |
卷 | 88 |
發行號 | 18 |
DOIs | |
出版狀態 | Published - 1 5月 2006 |