Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

Wei Chih Peng; Yew-Chuhg Wu

doi:10.1063/1.2199613

Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

Wei Chih Peng, Yew-Chuhg Wu^*

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

57 引文斯高帕斯（Scopus）

摘要

An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.

原文	English
文章編號	181117
期刊	Applied Physics Letters
卷	88
發行號	18
DOIs	https://doi.org/10.1063/1.2199613
出版狀態	Published - 1 五月 2006

存取文件

10.1063/1.2199613

其它文件與鏈接

Link to publication in Scopus

引用此

@article{1af6ba0b46f9435aaa9bb80b240100d3,

title = "Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate",

abstract = "An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.",

author = "Peng, {Wei Chih} and Yew-Chuhg Wu",

year = "2006",

month = may,

day = "1",

doi = "10.1063/1.2199613",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

AU - Peng, Wei Chih

AU - Wu, Yew-Chuhg

PY - 2006/5/1

Y1 - 2006/5/1

N2 - An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.

AB - An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.

UR - http://www.scopus.com/inward/record.url?scp=33646497071&partnerID=8YFLogxK

U2 - 10.1063/1.2199613

DO - 10.1063/1.2199613

M3 - Article

AN - SCOPUS:33646497071

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 181117

ER -

Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

摘要

存取文件

其它文件與鏈接

指紋

引用此