Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

Wei Chih Peng; Yew-Chuhg Wu

doi:10.1063/1.2199613

Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

Wei Chih Peng, Yew-Chuhg Wu^*

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

57 引文斯高帕斯（Scopus）

摘要

An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.

原文	English
文章編號	181117
期刊	Applied Physics Letters
卷	88
發行號	18
DOIs	https://doi.org/10.1063/1.2199613
出版狀態	Published - 1 5月 2006

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10.1063/1.2199613

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Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

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