Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment

Wei Ren Chen, Dun Bao Ruan, Kuei Shu Chang-Liao*, Hao Yan Wang, Guang Li Luo, Yu Chuan Chiu, Ting Kai Kuan, Po Tsun Liu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A novel Ge condensation process using low temperature supercritical phase fluid (SCF) was proposed on SiGe/Si GAAFET. Device with a Ge condensation by SCF treatment exhibits higher rmION, lower rmIOFF, larger rmION/rmIOFF, lower S.S., higher uniformity and better reliability, due to the enhanced mobility by the reduction of vacancy defects in SiGe and interface traps or/and reversed tensile strain in Si.

原文English
主出版物標題2023 Silicon Nanoelectronics Workshop, SNW 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面25-26
頁數2
ISBN(電子)9784863488083
DOIs
出版狀態Published - 2023
事件26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
持續時間: 11 6月 202312 6月 2023

出版系列

名字2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
國家/地區Japan
城市Kyoto
期間11/06/2312/06/23

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