TY - GEN
T1 - Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment
AU - Chen, Wei Ren
AU - Ruan, Dun Bao
AU - Chang-Liao, Kuei Shu
AU - Wang, Hao Yan
AU - Luo, Guang Li
AU - Chiu, Yu Chuan
AU - Kuan, Ting Kai
AU - Liu, Po Tsun
N1 - Publisher Copyright:
© 2023 JSAP.
PY - 2023
Y1 - 2023
N2 - A novel Ge condensation process using low temperature supercritical phase fluid (SCF) was proposed on SiGe/Si GAAFET. Device with a Ge condensation by SCF treatment exhibits higher rmION, lower rmIOFF, larger rmION/rmIOFF, lower S.S., higher uniformity and better reliability, due to the enhanced mobility by the reduction of vacancy defects in SiGe and interface traps or/and reversed tensile strain in Si.
AB - A novel Ge condensation process using low temperature supercritical phase fluid (SCF) was proposed on SiGe/Si GAAFET. Device with a Ge condensation by SCF treatment exhibits higher rmION, lower rmIOFF, larger rmION/rmIOFF, lower S.S., higher uniformity and better reliability, due to the enhanced mobility by the reduction of vacancy defects in SiGe and interface traps or/and reversed tensile strain in Si.
UR - http://www.scopus.com/inward/record.url?scp=85167442334&partnerID=8YFLogxK
U2 - 10.23919/SNW57900.2023.10183954
DO - 10.23919/SNW57900.2023.10183954
M3 - Conference contribution
AN - SCOPUS:85167442334
T3 - 2023 Silicon Nanoelectronics Workshop, SNW 2023
SP - 25
EP - 26
BT - 2023 Silicon Nanoelectronics Workshop, SNW 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th Silicon Nanoelectronics Workshop, SNW 2023
Y2 - 11 June 2023 through 12 June 2023
ER -