Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

Chien Chih Chen, Yew-Chuhg Wu*, Chih Pang Chang

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILCTFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs.

原文English
頁(從 - 到)637-640
頁數4
期刊Materials Chemistry and Physics
132
發行號2-3
DOIs
出版狀態Published - 15 2月 2012

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