Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

D. S. Wuu*, W. K. Wang, W. C. Shih, Ray-Hua Horng, C. E. Lee, W. Y. Lin, J. S. Fang

*此作品的通信作者

研究成果: Article同行評審

175 引文 斯高帕斯(Scopus)

摘要

Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.

原文English
頁(從 - 到)288-290
頁數3
期刊IEEE Photonics Technology Letters
17
發行號2
DOIs
出版狀態Published - 1 2月 2005

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