A three order of magnitude enhancement of integrated photoluminescence (PL) intensity and a large red shift of 90 meV PL peak energy are observed in Al0.22Ga0.78As grown on (111)B than those on (100). the measured RT and 77K electron mobilities for (111)B Al0.25Ga0.75As are 2620 and 3220 cm2/Vs, which exceed the (100) mobility values by 20.9% and 15.1%, with similar carrier densities at RT and 77K of 1.00E17 and 0.86E17 cm-3, respectively. To our best knowledge, this is the highest reported electron mobilities on Al0.25Ga0.75As. (100) Al0.4Ga0.6As/GaAs quantum well laser diode structures grown under identical conditions with a low threshold current density of 150 A/cm2 is an indication of excellent quality of AlGaAs material quality. The strong luminescence associated with a large red shift of 90 meV, the 20% mobility enhancement, and the strong composition modulation shown in TEM are indicative of the natural formation of quantized structures.
|出版狀態||Published - 12 七月 1994|
|事件||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
持續時間: 12 七月 1994 → 15 七月 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|期間||12/07/94 → 15/07/94|