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Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors
Ray-Hua Horng
*
, Shao Hua Huang, Chuang Yu Hsieh, Xinhe Zheng, Dong Sing Wuu
*
此作品的通信作者
電子研究所
研究成果
:
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同行評審
15
引文 斯高帕斯(Scopus)
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深入研究「Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors」主題。共同形成了獨特的指紋。
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Keyphrases
Wafer
100%
Indium Gallium Nitride (InGaN)
100%
GaN-based LED
100%
Double-sided
100%
Surface Texture
100%
Omnidirectional Reflector
100%
Luminance Efficiency
100%
P-GaN
60%
GaN-based Light-emitting Diodes
60%
Injection Current
40%
Metal-organic Chemical Vapor Deposition (MOCVD)
20%
Low Temperature
20%
Silicon Substrate
20%
Chip Size
20%
Sapphire
20%
Undoped
20%
Light Output
20%
GaN Layers
20%
High Reflectivity
20%
Active Regions
20%
Reflectivity
20%
Laser Lift-off
20%
Luminous Intensity
20%
Small chip Size
20%
Wafer Bonding Technology
20%
Light Effect
20%
Low-temperature Condition
20%
Saturation Behaviour
20%
Engineering
Light-Emitting Diode
100%
Textured Surface
100%
Low-Temperature
66%
Current Injection
66%
Chemical Vapor Deposition
33%
Vapor Deposition
33%
Silicon Substrate
33%
Bonding Technology
33%
Light Output Power
33%
Active Region
33%
Temperature Condition
33%
Wafer Bonding
33%
Emitted Light
33%
Material Science
Light-Emitting Diode
100%
Silicon
66%
Reflectivity
66%
Chemical Vapor Deposition
33%
Sapphire
33%
Chemical Engineering
Metallorganic Chemical Vapor Deposition
100%