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Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications
Chun Ling Hsu, Aftab Saleem, Amit Singh, Dayanand Kumar, Tseung-Yuen Tseng
電子研究所
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引文 斯高帕斯(Scopus)
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Keyphrases
Annealing
100%
Oxide Deposition
100%
Computing Applications
100%
Synapse
100%
Neuromorphic Computing
100%
Conductive Bridging Random Access Memory (CBRAM)
100%
Potentiation
50%
Artificial Synapses
50%
Conductance
25%
Oxides
25%
High Temperature
25%
Memory Device
25%
Switching Behavior
25%
Annealing Process
25%
Image Processing
25%
Nonlinearity
25%
Training Accuracy
25%
Learning Approaches
25%
Vacuum Annealing
25%
Pulse number
25%
Endurance Characteristics
25%
Good Linearity
25%
Efficient Learning
25%
Synaptic Device
25%
Synaptic Characteristics
25%
Analog Switch
25%
Artificial Intelligence Systems
25%
Memristive Synapse
25%
Training Epochs
25%
Multilevel Characteristics
25%
Engineering
Conductive
100%
Bridging
100%
Random Access Memory
100%
Image Processing
25%
Annealing Process
25%
Input Image
25%
Random Access Memory Device
25%
Learning Approach
25%
Artificial Intelligence
25%
Nonlinearity
25%
Synaptic Device
25%
Material Science
Oxide Compound
100%
Neuromorphic Computing
100%
Annealing
50%