Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Hung Wen Huang; J. T. Chu; C. C. Kao; T. H. Hseuh; Tien-Chang Lu; Hao-Chung Kuo; S. C. Wang; C. C. Yu

doi:10.1088/0957-4484/16/9/071

Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Hung Wen Huang
, J. T. Chu
, C. C. Kao
, T. H. Hseuh
, Tien-Chang Lu
, Hao-Chung Kuo
, S. C. Wang^*
, C. C. Yu

^*此作品的通信作者

光電工程學系

研究成果: Review article › 同行評審

102 引文斯高帕斯（Scopus）

摘要

This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

原文	English
頁（從 - 到）	1844-1848
頁數	5
期刊	Nanotechnology
卷	16
發行號	9
DOIs	https://doi.org/10.1088/0957-4484/16/9/071
出版狀態	Published - 1 9月 2005

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10.1088/0957-4484/16/9/071

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@article{7794fbc964fe4f4a9ba941bb4caec485,

title = "Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface",

abstract = "This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68\% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32\% by the increase in the contact area of the nano-roughened surface.",

author = "Huang, \{Hung Wen\} and Chu, \{J. T.\} and Kao, \{C. C.\} and Hseuh, \{T. H.\} and Tien-Chang Lu and Hao-Chung Kuo and Wang, \{S. C.\} and Yu, \{C. C.\}",

year = "2005",

month = sep,

day = "1",

doi = "10.1088/0957-4484/16/9/071",

language = "English",

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TY - JOUR

T1 - Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

AU - Huang, Hung Wen

AU - Chu, J. T.

AU - Kao, C. C.

AU - Hseuh, T. H.

AU - Lu, Tien-Chang

AU - Kuo, Hao-Chung

AU - Wang, S. C.

AU - Yu, C. C.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

AB - This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

UR - https://www.scopus.com/pages/publications/23444439608

U2 - 10.1088/0957-4484/16/9/071

DO - 10.1088/0957-4484/16/9/071

M3 - Review article

AN - SCOPUS:23444439608

SN - 0957-4484

VL - 16

SP - 1844

EP - 1848

JO - Nanotechnology

JF - Nanotechnology

IS - 9

ER -

Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

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