Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Hung Wen Huang, J. T. Chu, C. C. Kao, T. H. Hseuh, Tien-Chang Lu, Hao-Chung Kuo, S. C. Wang*, C. C. Yu

*此作品的通信作者

研究成果: Review article同行評審

98 引文 斯高帕斯(Scopus)

摘要

This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

原文English
頁(從 - 到)1844-1848
頁數5
期刊Nanotechnology
16
發行號9
DOIs
出版狀態Published - 1 9月 2005

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