Enhanced light output in double roughened GaN light-emitting diodes via various texturing treatments of undoped-GaN layer

Wei Chih Peng, Yew-Chuhg Wu*

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

An InGaN-GaN light-emitting diodes (LEDs) with double roughened (p-GaN and undoped-GaN) surfaces were successfully fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. The effect of the roughness of the undoped-GaN layer on the performance of double roughened LEDs was investigated. It was found that the rms roughness of the undoped-GaN layer increased from 18.6 to 146.7 nm, the output power increased from 7.2 to 10.2 mW, and view angle decreased from 133.6 to 116°.

原文English
頁(從 - 到)7709-7712
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號10 A
DOIs
出版狀態Published - 15 10月 2006

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