摘要
High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.
原文 | English |
---|---|
文章編號 | 7005410 |
期刊 | IEEE Journal of Selected Topics in Quantum Electronics |
卷 | 21 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 1 7月 2015 |