Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

Jhih Kai Huang; Che Yu Liu; Tzi Pei Chen; Hung Wen Huang; Fang I. Lai; Po-Tsung Lee; Chung Hsiang Lin; Chun Yen Chang; Tsung-Sheng Kao; Hao-Chung Kuo

doi:10.1109/JSTQE.2015.2389529

Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

Jhih Kai Huang, Che Yu Liu, Tzi Pei Chen, Hung Wen Huang, Fang I. Lai, Po-Tsung Lee, Chung Hsiang Lin, Chun Yen Chang, Tsung-Sheng Kao, Hao-Chung Kuo

光電工程學系

研究成果: Article › 同行評審

24 引文斯高帕斯（Scopus）

摘要

High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm ² , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.

原文	English
文章編號	7005410
期刊	IEEE Journal of Selected Topics in Quantum Electronics
卷	21
發行號	4
DOIs	https://doi.org/10.1109/JSTQE.2015.2389529
出版狀態	Published - 1 7月 2015

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10.1109/JSTQE.2015.2389529

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title = "Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes",

abstract = " High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions. ",

keywords = "Light emitting diodes, Lithography, Nanotechnology, Optoelectronic devices",

author = "Huang, {Jhih Kai} and Liu, {Che Yu} and Chen, {Tzi Pei} and Huang, {Hung Wen} and Lai, {Fang I.} and Po-Tsung Lee and Lin, {Chung Hsiang} and Chang, {Chun Yen} and Tsung-Sheng Kao and Hao-Chung Kuo",

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AU - Huang, Jhih Kai

AU - Liu, Che Yu

AU - Chen, Tzi Pei

AU - Huang, Hung Wen

AU - Lai, Fang I.

AU - Lee, Po-Tsung

AU - Lin, Chung Hsiang

AU - Chang, Chun Yen

AU - Kao, Tsung-Sheng

AU - Kuo, Hao-Chung

PY - 2015/7/1

Y1 - 2015/7/1

N2 - High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.

AB - High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.

KW - Light emitting diodes

KW - Lithography

KW - Nanotechnology

KW - Optoelectronic devices

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VL - 21

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

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ER -

Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

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