Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO2Treatment with H2O2Cosolvent

Dun Bao Ruan, Kuei Shu Chang-Liao*, Guan Ting Liu, Yu Chuan Chiu, Kai Jhih Gan, Po Tsun Liu

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Significant improvements on Ge nMOSFET can be achieved by a novel low temperature supercritical phase fluid treatment with H2O2 cosolvent. Thanks to the reduction of oxygen vacancy and unstable oxidation states, devices with the proposed treatment exhibit a low equivalent oxide thickness of 0.67 nm, 2-order reduction on gate leakage current, 7 times improvement on on-current, very low subthreshold swing of 79 mV/dev, high on/off current ratio, small hysteresis of 43.3 mV, low interface trap density, excellent uniformity and reliability characteristics.

原文English
文章編號9383307
頁(從 - 到)645-648
頁數4
期刊Ieee Electron Device Letters
42
發行號5
DOIs
出版狀態Published - 5月 2021

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