Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material

Ping Huang, Mu Yu Chen, Edward Yi Chang

研究成果: Conference contribution同行評審

摘要

In this work, InGaAs ferroelectric FET (FE-FET) is shown to have superior performance than baseline MOSFET in terms of DC, short-channel effects, high-frequency and power efficiency by using TCAD simulation. This phenomenon can be attributed to the higher electron velocity, higher device transconductance and intensified gate control in FE-FET due to the amplified effect. Though thicker ferroelectric leads to better DC properties, the optimum ferro-thickness for high-frequency applications is around 7 nm due to the trade-off between electron velocity and parasitic capacitance. Besides, the applied drain-to-source voltage (VDS) is found to be 21 % lower than baseline device with identical cut-off frequency (fT).

原文English
主出版物標題2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350334166
DOIs
出版狀態Published - 2023
事件2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
持續時間: 17 4月 202320 4月 2023

出版系列

名字2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區Taiwan
城市Hsinchu
期間17/04/2320/04/23

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