Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level

Chih Ren Hsieh*, Yung Yu Chen, Wen Shin Lin, Kuo-Jui Lin, Jen Chung Lou

*此作品的通信作者

    研究成果: Conference contribution同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO2 trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF4 plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application.

    原文English
    主出版物標題Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
    頁面257-263
    頁數7
    版本2
    DOIs
    出版狀態Published - 1 8月 2011
    事件Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting - Montreal, QC, Canada
    持續時間: 2 5月 20114 5月 2011

    出版系列

    名字ECS Transactions
    號碼2
    35
    ISSN(列印)1938-5862
    ISSN(電子)1938-6737

    Conference

    ConferenceSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting
    國家/地區Canada
    城市Montreal, QC
    期間2/05/114/05/11

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