摘要
A new component in the inorganic-organic (IN-OR) photovoltaic (PV) cell design was introduced in the form of an electronic sieve layer that can block hole diffusion and enhance charge separation and transport. A ZnPc(Aldrich) solution in toluene was spin coated on top of the sieve layer and annealed for 20 min at 90°C at a pressure of approximately 1×10-2Torr. The p-type AnPc layer is found to provide a uniform absorption over the visible spectrum and has a long absorption length of 80 nm and an exciton diffusion length of 30∓10nm. The oxide sieve layer produced by the surface-current-induced oxidation (SCIO) method gives the best incident photon-to-current collection efficiency (IPCE) in comparison to either thermal annealing (TA) oxide or the LiF. The variation in cell performance is due to the quality and thickness of the sieve with the best cell having the lowest stress and an optimum thickness resulting in hole blocking.
原文 | English |
---|---|
頁(從 - 到) | 759-763 |
頁數 | 5 |
期刊 | Advanced Materials |
卷 | 21 |
發行號 | 7 |
DOIs | |
出版狀態 | Published - 16 2月 2009 |