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Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots
S. S. Tzeng,
Pei-Wen Li
電子研究所
研究成果
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Article
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同行評審
30
引文 斯高帕斯（Scopus）
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Keyphrases
Photoresponsivity
100%
Germanium Quantum Dots
100%
Semiconductor Diodes
100%
Multi-stack
100%
Metal Oxide Semiconductor
100%
Amorphous Si
40%
Gate Oxide
40%
Ge Dot
40%
Temperature Effect
20%
Blue Shift
20%
Light Absorption
20%
Current Enhancement
20%
Current-voltage Characteristics
20%
Responsivity
20%
Spectral Response
20%
Quantum Efficiency
20%
Size Reduction
20%
Bias Dependence
20%
Quantum Confinement Effect
20%
Dark Current
20%
Dot Size
20%
Near Ultraviolet
20%
Carrier Transport Mechanism
20%
Inversion Mode
20%
Peak Energy
20%
SiO2 Barrier
20%
Ultraviolet Photodetection
20%
Material Science
Quantum Dot
100%
Germanium
100%
Metal Oxide
100%
Oxide Semiconductor
100%
Amorphous Material
40%
Oxide Compound
40%
Current Voltage Characteristics
20%
Multilayer
20%
Percolation
20%
Carrier Transport
20%
Engineering
Quantum Dot
100%
Metal Oxide Semiconductor
100%
Gate Oxide
40%
Current-Voltage Characteristic
20%
Dot Layer
20%
Spectral Response
20%
Quantum Efficiency
20%
Blueshift
20%
Responsivity
20%
Polycrystalline
20%
Quantum Confinement Effect
20%
Light Absorption
20%
Transport Mechanism
20%
Rectification
20%
Peak Energy
20%
Photodetection
20%
Physics
Quantum Dot
100%
Metal Oxide Semiconductor
100%
Semiconductor Diodes
100%
Spectral Sensitivity
20%
Polycrystalline
20%
Electromagnetic Absorption
20%
Dark Current
20%
Rectification
20%
Percolation
20%