Enhance the luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface using wafer bonding methods
Wei Chih Peng*, Yew-Chuhg Wu
*此作品的通信作者
研究成果: Conference article › 同行評審
Wei Chih Peng*, Yew-Chuhg Wu
研究成果: Conference article › 同行評審