An InGaN-GaN light emitting diode (LED) with double roughened surfaces was fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. It was found that the frontside luminance intensity of double roughened LED was 2.77 times higher than that of the conventional LED at an injection current of 20 mA. The backside luminance intensity was 2.37 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface, and redirect photons, which were originally emitted out of the escape cone, back into the escape cone. copyright The Electrochemical Society.
|頁（從 - 到）||335-338|
|出版狀態||Published - 1 12月 2006|
|事件||Semiconductor Wafer Bonding 9: Science, Technology, and Applications - 210th Electrochemical Society Meeting - Cancun, Mexico|
持續時間: 29 10月 2006 → 3 11月 2006