@inproceedings{ed204e4a52b94d45b1ef955f963ffd59,
title = "Enhance Extreme UltraViolet Lithography mask inspection contrast by using Fabry-Perot type antireflective coatings",
abstract = "In this paper, we demonstrate two antireflective coatings (ARC) structures enable the absorber stacks to meet the exposure and inspection requirements at the same time. The absorber stack is comprised of TaN or Cr and a single-layer antireflective coatings. Si/sub 3/N/sub 4/ layer is shown with lower reflectance and higher inspection contrast than SiO/sub 2/ layer. Fabry-Perot type ARC structures perform better contrast and thickness variation tolerance than the single-layer ARC structure.",
author = "Cheng, {H. C.} and Chen, {H. L.} and Ko, {T. S.} and Lai, {L. J.} and Fu-Hsiang Ko and Chu, {T. C.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/IMNC.2003.1268535",
language = "English",
series = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "94--95",
booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
address = "United States",
note = "International Microprocesses and Nanotechnology Conference, MNC 2003 ; Conference date: 29-10-2003 Through 31-10-2003",
}