Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

Jyh Shyang Wang*, Ru Shang Hsiao, Jenn-Fang Chen, Chu Shou Yang, Kuo-Jui Lin, Chiu Yueh Liang, Chih Ming Lai, Hui Yu Liu, Tung Wei Chi, Jim Y. Chi

*此作品的通信作者

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

Continuous large-broad laser gain spectra near 1.3 μm are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L = 1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm2 per QD layer were achieved.

原文English
頁(從 - 到)1590-1592
頁數3
期刊IEEE Photonics Technology Letters
17
發行號8
DOIs
出版狀態Published - 8月 2005

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