Energy Transformation between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test

Karuna Nidhi; Jian Hsing Lee; Shao Chang Huang; Ming-Dou Ker

doi:10.1109/TDMR.2020.2985306

Energy Transformation between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test

Karuna Nidhi^*, Jian Hsing Lee, Shao Chang Huang, Ming-Dou Ker

^*此作品的通信作者

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

The fundamental model of energy transformation between the inductor and the power transistor for the unclamped inductive switching (UIS) test is inspected. Based on the experimental results, the energy stored in the inductor at the period of the channel turn-on can be dissipated by the power transistor after the channel is turned off. In this work, a new theoretical model to well describe the electrical and thermal behaviors of the power transistor during the unclamped inductive switching (UIS) test has been identified and analyzed with the experimental silicon results under different inductor values in 0.15 \mu \text{m} BCD process. The total UIS energy reduced due to series resistance of the inductor and the power transistor has been theoretically explained and well matches with the experimental measured results on silicon.

原文	English
文章編號	9060982
頁（從 - 到）	413-419
頁數	7
期刊	IEEE Transactions on Device and Materials Reliability
卷	20
發行號	2
DOIs	https://doi.org/10.1109/TDMR.2020.2985306
出版狀態	Published - 6月 2020

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10.1109/TDMR.2020.2985306

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title = "Energy Transformation between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test",

abstract = "The fundamental model of energy transformation between the inductor and the power transistor for the unclamped inductive switching (UIS) test is inspected. Based on the experimental results, the energy stored in the inductor at the period of the channel turn-on can be dissipated by the power transistor after the channel is turned off. In this work, a new theoretical model to well describe the electrical and thermal behaviors of the power transistor during the unclamped inductive switching (UIS) test has been identified and analyzed with the experimental silicon results under different inductor values in 0.15 \mu \text{m} BCD process. The total UIS energy reduced due to series resistance of the inductor and the power transistor has been theoretically explained and well matches with the experimental measured results on silicon.",

keywords = "Unclamped inductive switching (UIS), avalanche breakdown, inductor, power transistor, second breakdown, series resistance",

author = "Karuna Nidhi and Lee, {Jian Hsing} and Huang, {Shao Chang} and Ming-Dou Ker",

note = "Publisher Copyright: {\textcopyright} 2001-2011 IEEE.",

year = "2020",

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doi = "10.1109/TDMR.2020.2985306",

language = "English",

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T1 - Energy Transformation between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test

AU - Nidhi, Karuna

AU - Lee, Jian Hsing

AU - Huang, Shao Chang

AU - Ker, Ming-Dou

PY - 2020/6

Y1 - 2020/6

N2 - The fundamental model of energy transformation between the inductor and the power transistor for the unclamped inductive switching (UIS) test is inspected. Based on the experimental results, the energy stored in the inductor at the period of the channel turn-on can be dissipated by the power transistor after the channel is turned off. In this work, a new theoretical model to well describe the electrical and thermal behaviors of the power transistor during the unclamped inductive switching (UIS) test has been identified and analyzed with the experimental silicon results under different inductor values in 0.15 \mu \text{m} BCD process. The total UIS energy reduced due to series resistance of the inductor and the power transistor has been theoretically explained and well matches with the experimental measured results on silicon.

AB - The fundamental model of energy transformation between the inductor and the power transistor for the unclamped inductive switching (UIS) test is inspected. Based on the experimental results, the energy stored in the inductor at the period of the channel turn-on can be dissipated by the power transistor after the channel is turned off. In this work, a new theoretical model to well describe the electrical and thermal behaviors of the power transistor during the unclamped inductive switching (UIS) test has been identified and analyzed with the experimental silicon results under different inductor values in 0.15 \mu \text{m} BCD process. The total UIS energy reduced due to series resistance of the inductor and the power transistor has been theoretically explained and well matches with the experimental measured results on silicon.

KW - Unclamped inductive switching (UIS)

KW - avalanche breakdown

KW - inductor

KW - power transistor

KW - second breakdown

KW - series resistance

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Energy Transformation between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test

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