Energy band calculation of Si/Si0.7Ge0.3Nanopillars in kspace

Min Hui Chuang, Yiming Li*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this work, we explore the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in Si0.7Ge0.3 matrix fabricated by neutral beam etching. Instead of real-space modeling, we formulate and solve the Schrödinger equation with an effective mass approach using 3D finite-element simulation in k→ space. This approach enables us to calculate the electronic structure in a computationally effective manner. The effects of the height, radius, separation, and shape of Si NPs on the energy band and density of states are calculated and discussed. The effect of the radius on the electron energy band control is significant while that of the shape is marginal owing to high geometry aspect ratio. In contrast with the results of electrons, both the radius and separation play crucial role in tuning the energy band of holes; consequently, they govern the variation of energy band gap of Si/Si0.7Ge0.3 NPs.

原文English
主出版物標題2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面23-26
頁數4
ISBN(電子)9784863487635
DOIs
出版狀態Published - 23 九月 2020
事件2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan
持續時間: 3 九月 20206 十月 2020

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2020-September

Conference

Conference2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
國家/地區Japan
城市Virtual, Kobe
期間3/09/206/10/20

指紋

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