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Enabling high-injection current light-emitting diodes prepared on 10-μm-thick GaN films grown by hydride vapor phase epitaxy
Yu An Chen, Chia Wei Chang,
Cheng-Huang Kuo
照明與能源光電研究所
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引文 斯高帕斯(Scopus)
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深入研究「Enabling high-injection current light-emitting diodes prepared on 10-μm-thick GaN films grown by hydride vapor phase epitaxy」主題。共同形成了獨特的指紋。
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Keyphrases
Hydride Vapor Phase Epitaxy
100%
Light-emitting Diodes
100%
Injection Current
100%
GaN Films
100%
High Injection
100%
Metal-organic Chemical Vapor Deposition (MOCVD)
37%
Crystal Quality
25%
Thermal Conductivity
12%
Light Output
12%
Saturation Current
12%
Patterned Sapphire Substrate
12%
Two-step Growth Method
12%
Light Effect
12%
Sputtered AlN
12%
Material Science
Film
100%
Hydride
100%
Vapor Phase Epitaxy
100%
Light-Emitting Diode
100%
Metal-Organic Chemical Vapor Deposition
37%
Sapphire
12%
Thermal Conductivity
12%
Aluminum Nitride
12%
Engineering
Light-Emitting Diode
100%
Current Injection
100%
Metal Organic Chemical Vapor Deposition
50%
Crystal Quality
33%
Sapphire Substrate
16%
Light Output Power
16%
Thermal Conductivity
16%
Growth Method
16%
Simplified Method
16%