Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array

Ming Chien Tsai*, Yi Wei Lin, Hao I. Yang, Ming Hsien Tu, Wei Chiang Shih, Nan Chun Lien, Kuen Di Lee, Shyh-Jye Jou, Ching Te Chuang, Wei Hwang

*此作品的通信作者

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

One of the major reliability concerns in nano-scale CMOS VLSI design is the time-dependent Bias Temperature Instability (BTI) degradation. Negative Bias Temperature Instability and Positive Bias Temperature Instability (NBTI and PBTI) weaken MOSFETs over usage/stress time. We present an embedded 6T SRAM ring oscillator structure which provides in-situ measurement/characterization capability of cell transistor degradation induced by bias temperature instability. The viability of the embedded ring oscillator odometer and the impact of bias temperature instability are demonstrated in 55nm standard performance CMOS technology.

原文English
主出版物標題2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers
DOIs
出版狀態Published - 25 7月 2012
事件2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Hsinchu, Taiwan
持續時間: 23 4月 201225 4月 2012

出版系列

名字2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

Conference

Conference2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012
國家/地區Taiwan
城市Hsinchu
期間23/04/1225/04/12

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