Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array

Ming Chien Tsai; Yi Wei Lin; Hao I. Yang; Ming Hsien Tu; Wei Chiang Shih; Nan Chun Lien; Kuen Di Lee; Shyh-Jye Jou; Ching Te Chuang; Wei Hwang

doi:10.1109/VLSI-DAT.2012.6212587

Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array

Ming Chien Tsai^*, Yi Wei Lin, Hao I. Yang, Ming Hsien Tu, Wei Chiang Shih, Nan Chun Lien, Kuen Di Lee, Shyh-Jye Jou, Ching Te Chuang, Wei Hwang

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference contribution › 同行評審

6 引文斯高帕斯（Scopus）

摘要

One of the major reliability concerns in nano-scale CMOS VLSI design is the time-dependent Bias Temperature Instability (BTI) degradation. Negative Bias Temperature Instability and Positive Bias Temperature Instability (NBTI and PBTI) weaken MOSFETs over usage/stress time. We present an embedded 6T SRAM ring oscillator structure which provides in-situ measurement/characterization capability of cell transistor degradation induced by bias temperature instability. The viability of the embedded ring oscillator odometer and the impact of bias temperature instability are demonstrated in 55nm standard performance CMOS technology.

原文	English
主出版物標題	2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VLSI-DAT.2012.6212587
出版狀態	Published - 25 7月 2012
事件	2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Hsinchu, 台灣持續時間: 23 4月 2012 → 25 4月 2012

出版系列

名字	2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

Conference

Conference	2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012
國家/地區	台灣
城市	Hsinchu
期間	23/04/12 → 25/04/12

存取文件

10.1109/VLSI-DAT.2012.6212587

其它文件與鏈接

Link to publication in Scopus

引用此

Tsai, M. C., Lin, Y. W., Yang, H. I., Tu, M. H., Shih, W. C., Lien, N. C., Lee, K. D., Jou, S.-J., Chuang, C. T., & Hwang, W. (2012). Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array. 於 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers 文章 6212587 (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers). https://doi.org/10.1109/VLSI-DAT.2012.6212587

Tsai, Ming Chien ; Lin, Yi Wei ; Yang, Hao I. 等. / Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array. 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers. 2012. (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers).

@inproceedings{7e054a6546844627939449ed7e58bf27,

title = "Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array",

abstract = "One of the major reliability concerns in nano-scale CMOS VLSI design is the time-dependent Bias Temperature Instability (BTI) degradation. Negative Bias Temperature Instability and Positive Bias Temperature Instability (NBTI and PBTI) weaken MOSFETs over usage/stress time. We present an embedded 6T SRAM ring oscillator structure which provides in-situ measurement/characterization capability of cell transistor degradation induced by bias temperature instability. The viability of the embedded ring oscillator odometer and the impact of bias temperature instability are demonstrated in 55nm standard performance CMOS technology.",

author = "Tsai, {Ming Chien} and Lin, {Yi Wei} and Yang, {Hao I.} and Tu, {Ming Hsien} and Shih, {Wei Chiang} and Lien, {Nan Chun} and Lee, {Kuen Di} and Shyh-Jye Jou and Chuang, {Ching Te} and Wei Hwang",

year = "2012",

month = jul,

day = "25",

doi = "10.1109/VLSI-DAT.2012.6212587",

language = "English",

isbn = "9781457720819",

series = "2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers",

booktitle = "2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers",

note = "2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 ; Conference date: 23-04-2012 Through 25-04-2012",

}

Tsai, MC, Lin, YW, Yang, HI, Tu, MH, Shih, WC, Lien, NC, Lee, KD, Jou, S-J, Chuang, CT & Hwang, W 2012, Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array. 於 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers., 6212587, 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers, 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012, Hsinchu, 台灣, 23/04/12. https://doi.org/10.1109/VLSI-DAT.2012.6212587

Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array. / Tsai, Ming Chien; Lin, Yi Wei; Yang, Hao I. 等.
2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers. 2012. 6212587 (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array

AU - Tsai, Ming Chien

AU - Lin, Yi Wei

AU - Yang, Hao I.

AU - Tu, Ming Hsien

AU - Shih, Wei Chiang

AU - Lien, Nan Chun

AU - Lee, Kuen Di

AU - Jou, Shyh-Jye

AU - Chuang, Ching Te

AU - Hwang, Wei

PY - 2012/7/25

Y1 - 2012/7/25

N2 - One of the major reliability concerns in nano-scale CMOS VLSI design is the time-dependent Bias Temperature Instability (BTI) degradation. Negative Bias Temperature Instability and Positive Bias Temperature Instability (NBTI and PBTI) weaken MOSFETs over usage/stress time. We present an embedded 6T SRAM ring oscillator structure which provides in-situ measurement/characterization capability of cell transistor degradation induced by bias temperature instability. The viability of the embedded ring oscillator odometer and the impact of bias temperature instability are demonstrated in 55nm standard performance CMOS technology.

AB - One of the major reliability concerns in nano-scale CMOS VLSI design is the time-dependent Bias Temperature Instability (BTI) degradation. Negative Bias Temperature Instability and Positive Bias Temperature Instability (NBTI and PBTI) weaken MOSFETs over usage/stress time. We present an embedded 6T SRAM ring oscillator structure which provides in-situ measurement/characterization capability of cell transistor degradation induced by bias temperature instability. The viability of the embedded ring oscillator odometer and the impact of bias temperature instability are demonstrated in 55nm standard performance CMOS technology.

UR - http://www.scopus.com/inward/record.url?scp=84864057444&partnerID=8YFLogxK

U2 - 10.1109/VLSI-DAT.2012.6212587

DO - 10.1109/VLSI-DAT.2012.6212587

M3 - Conference contribution

AN - SCOPUS:84864057444

SN - 9781457720819

T3 - 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

BT - 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

T2 - 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012

Y2 - 23 April 2012 through 25 April 2012

ER -

Tsai MC, Lin YW, Yang HI, Tu MH, Shih WC, Lien NC 等. Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array. 於 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers. 2012. 6212587. (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers). doi: 10.1109/VLSI-DAT.2012.6212587

Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array

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