Embedded carbon bridges in low-k PECVD silicon carbonitride films using silazane precursors

Wei Yuan Chang, Wei Zhong Chen, Hung Tse Lee, Jihperng Leu*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Low-k, carbon-rich SiC x N y films for diffusion barrier applications have been fabricated by plasma-enhanced chemical vapor deposition (PECVD) using silazanes as the single-source precursor. Linear and cyclic silazane precursors with vinyl groups yield SiC x N y films with carbon bridges, namely ethylene bridges (Si-CH2-CH2-Si) and methylene bridges (Si-CH2-Si), which are readily formed and embedded with the Si-N(-C) matrix. A SiC x N y film of low k = 3.2 is achieved by successful incorporation of ethylene bridge embedded within the Si-N(-C x) network by using a linear silazane precursor. Also, for these silazanes-deposited SiC x N y films at a fixed dielectric constant below 4.2, cyclic silazane, VSZ (1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane) produces films of higher film density and modulus, compared to those by a linear silazane precursor.

原文English
文章編號SHHB01
期刊Japanese Journal of Applied Physics
58
發行號SH
DOIs
出版狀態Published - 1 一月 2019

指紋

深入研究「Embedded carbon bridges in low-k PECVD silicon carbonitride films using silazane precursors」主題。共同形成了獨特的指紋。

引用此