Elucidation of solid incorporation of InGaN grown by metallorganic vapor phase epitaxy

Jehn Ou*, Wei-Kuo Chen, Heng Ching Lin, Yung Chung Pan, Ming Chih Lee

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

We carried out a systematic study on the solid incorporation of InGaN under various growth conditions using metallorganic vapor phase epitaxy (MOVPE). The solid distribution of InGaN was found to be very sensitive to the growth temperature, and the TMGa and TMIn flow rates. Experimental results indicated that at low Ga flow rates InGaN growth is essentially governed by thermodynamic factors, whereas at high growth rate the InGaN solid concentration is determined merely by the vapor composition in the gas phase. In regard to the effect of TMIn flow rates on InGaN growth, it was found that once In droplets form on the surface, the In growth efficiency correspondingly decreases significantly, accounting for the low In solid concentration in InGaN at high TMIn flow rates.

原文English
期刊Japanese Journal of Applied Physics, Part 2: Letters
37
發行號6 A
DOIs
出版狀態Published - 1 6月 1998

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