Ellipsometry study on refractive index profiles of the SiO 2/Si3N4/SiO2/Si structure

Tien-Sheng Chao; Chung Len Lee; Tan Fu Lei

doi:10.1063/1.353208

Ellipsometry study on refractive index profiles of the SiO ₂/Si₃N₄/SiO₂/Si structure

Tien-Sheng Chao^*, Chung Len Lee, Tan Fu Lei

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

In this work, the refractive index profiles of SiO₂/Si ₃N₄/SiO₂/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si₃N₄/SiO₂/silicon structure in a wet O ₂ ambient at the temperature range of 900-1050°C for different lengths of time. It was found that for a nitride film thickness less than 250 Å, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O₂ oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.

原文	English
頁（從 - 到）	1732-1736
頁數	5
期刊	Journal of Applied Physics
卷	73
發行號	4
DOIs	https://doi.org/10.1063/1.353208
出版狀態	Published - 1 12月 1993

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title = "Ellipsometry study on refractive index profiles of the SiO 2/Si3N4/SiO2/Si structure",

abstract = "In this work, the refractive index profiles of SiO2/Si 3N4/SiO2/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O 2 ambient at the temperature range of 900-1050°C for different lengths of time. It was found that for a nitride film thickness less than 250 {\AA}, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2 oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.",

author = "Tien-Sheng Chao and Lee, {Chung Len} and Lei, {Tan Fu}",

year = "1993",

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doi = "10.1063/1.353208",

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T1 - Ellipsometry study on refractive index profiles of the SiO 2/Si3N4/SiO2/Si structure

AU - Chao, Tien-Sheng

AU - Lee, Chung Len

AU - Lei, Tan Fu

PY - 1993/12/1

Y1 - 1993/12/1

N2 - In this work, the refractive index profiles of SiO2/Si 3N4/SiO2/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O 2 ambient at the temperature range of 900-1050°C for different lengths of time. It was found that for a nitride film thickness less than 250 Å, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2 oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.

AB - In this work, the refractive index profiles of SiO2/Si 3N4/SiO2/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O 2 ambient at the temperature range of 900-1050°C for different lengths of time. It was found that for a nitride film thickness less than 250 Å, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2 oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.

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U2 - 10.1063/1.353208

DO - 10.1063/1.353208

M3 - Article

AN - SCOPUS:0345922654

SN - 0021-8979

VL - 73

SP - 1732

EP - 1736

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Ellipsometry study on refractive index profiles of the SiO 2/Si3N4/SiO2/Si structure

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Ellipsometry study on refractive index profiles of the SiO ₂/Si₃N₄/SiO₂/Si structure