Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane

Ting Chang Chang*, Po-Tsun Liu, Tsung Ming Tsai, Fon Shan Yeh, Tseung-Yuen Tseng, Ming Shih Tsai, Ben Chang Chen, Ya Liang Yang, Simon M. Sze

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.

原文English
頁(從 - 到)3143-3146
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
發行號5R
DOIs
出版狀態Published - 5月 2001

指紋

深入研究「Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane」主題。共同形成了獨特的指紋。

引用此