Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

T. C. Chang; Po-Tsun Liu; Y. S. Mor; T. M. Tsai; C. W. Chen; Y. J. Mei; Fu-Ming Pan; W. F. Wu; S. M. Sze

doi:10.1116/1.1495876

Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

T. C. Chang^*, Po-Tsun Liu, Y. S. Mor, T. M. Tsai, C. W. Chen, Y. J. Mei, Fu-Ming Pan, W. F. Wu, S. M. Sze

^*此作品的通信作者

研究成果: Conference article › 同行評審

41 引文斯高帕斯（Scopus）

摘要

O₂ plasma ashing and wet stripper treatment were shown to lead to the dielectric degradation in OSG film during photoresist removal processing. The dielectric degradation results from the moisture uptake. It was confirmed that TMCS treatment is an effective method to negate the dielectric degradation in the OSG film for the photoresist removal application.

原文	English
頁（從 - 到）	1561-1566
頁數	6
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	20
發行號	4
DOIs	https://doi.org/10.1116/1.1495876
出版狀態	Published - 7月 2002
事件	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, 美國持續時間: 6 1月 2002 → 10 1月 2002

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title = "Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment",

abstract = "O2 plasma ashing and wet stripper treatment were shown to lead to the dielectric degradation in OSG film during photoresist removal processing. The dielectric degradation results from the moisture uptake. It was confirmed that TMCS treatment is an effective method to negate the dielectric degradation in the OSG film for the photoresist removal application.",

author = "Chang, {T. C.} and Po-Tsun Liu and Mor, {Y. S.} and Tsai, {T. M.} and Chen, {C. W.} and Mei, {Y. J.} and Fu-Ming Pan and Wu, {W. F.} and Sze, {S. M.}",

year = "2002",

month = jul,

doi = "10.1116/1.1495876",

language = "English",

volume = "20",

pages = "1561--1566",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

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TY - JOUR

T1 - Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Mor, Y. S.

AU - Tsai, T. M.

AU - Chen, C. W.

AU - Mei, Y. J.

AU - Pan, Fu-Ming

AU - Wu, W. F.

AU - Sze, S. M.

PY - 2002/7

Y1 - 2002/7

N2 - O2 plasma ashing and wet stripper treatment were shown to lead to the dielectric degradation in OSG film during photoresist removal processing. The dielectric degradation results from the moisture uptake. It was confirmed that TMCS treatment is an effective method to negate the dielectric degradation in the OSG film for the photoresist removal application.

AB - O2 plasma ashing and wet stripper treatment were shown to lead to the dielectric degradation in OSG film during photoresist removal processing. The dielectric degradation results from the moisture uptake. It was confirmed that TMCS treatment is an effective method to negate the dielectric degradation in the OSG film for the photoresist removal application.

UR - http://www.scopus.com/inward/record.url?scp=0035982588&partnerID=8YFLogxK

U2 - 10.1116/1.1495876

DO - 10.1116/1.1495876

M3 - Conference article

AN - SCOPUS:0035982588

SN - 1071-1023

VL - 20

SP - 1561

EP - 1566

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

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