Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

T. C. Chang*, Po-Tsun Liu, Y. S. Mor, T. M. Tsai, C. W. Chen, Y. J. Mei, Fu-Ming Pan, W. F. Wu, S. M. Sze

*此作品的通信作者

研究成果: Conference article同行評審

40 引文 斯高帕斯(Scopus)

摘要

O2 plasma ashing and wet stripper treatment were shown to lead to the dielectric degradation in OSG film during photoresist removal processing. The dielectric degradation results from the moisture uptake. It was confirmed that TMCS treatment is an effective method to negate the dielectric degradation in the OSG film for the photoresist removal application.

原文English
頁(從 - 到)1561-1566
頁數6
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號4
DOIs
出版狀態Published - 1 七月 2002
事件Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
持續時間: 6 一月 200210 一月 2002

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