O2 plasma ashing and wet stripper treatment were shown to lead to the dielectric degradation in OSG film during photoresist removal processing. The dielectric degradation results from the moisture uptake. It was confirmed that TMCS treatment is an effective method to negate the dielectric degradation in the OSG film for the photoresist removal application.
|頁（從 - 到）||1561-1566|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 1 七月 2002|
|事件||Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States|
持續時間: 6 一月 2002 → 10 一月 2002