Electrostatic Integrity in Negative-Capacitance FETs - A Subthreshold Modeling Approach

Pin Su*, Wei Xiang You

*此作品的通信作者

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

Using an analytical subthreshold potential model, this paper shows that the negative-capacitance FinFET (NC-FinFET) inherently possesses a superior electrostatic integrity than the baseline FinFET. Taking into account the spacer induced distributed charges in our subthreshold model, we demonstrate that an adequate spacer design can be utilized to further enhance the NC effect and the electrostatic integrity for NC-FinFETs. This may serve as a way to extend the FinFET scaling.

原文English
主出版物標題2019 IEEE International Electron Devices Meeting, IEDM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁數4
ISBN(電子)9781728140315
DOIs
出版狀態Published - 十二月 2019
事件65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
持續時間: 7 十二月 201911 十二月 2019

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2019-December
ISSN(列印)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
國家/地區United States
城市San Francisco
期間7/12/1911/12/19

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