TY - GEN
T1 - Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices
T2 - 5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998
AU - Ker, Ming-Dou
PY - 1998/1/1
Y1 - 1998/1/1
N2 - An overview on the electrostatic discharge (ESD) protection circuits by using the lateral SCR devices in CMOS IC's is presented. The history of the lateral SCR devices used for on-chip ESD protection is introduced. The practical problem of using the SCR devices in the ESD protection circuits of CMOS IC's is also discussed. Such SCR devices have been found to be accidentally triggered on by the noisy pulses when the IC's are in the normal operating conditions. To overcome this problem, two solutions are proposed to safely apply the SCR devices for effective ESD protection in the CMOS IC's.
AB - An overview on the electrostatic discharge (ESD) protection circuits by using the lateral SCR devices in CMOS IC's is presented. The history of the lateral SCR devices used for on-chip ESD protection is introduced. The practical problem of using the SCR devices in the ESD protection circuits of CMOS IC's is also discussed. Such SCR devices have been found to be accidentally triggered on by the noisy pulses when the IC's are in the normal operating conditions. To overcome this problem, two solutions are proposed to safely apply the SCR devices for effective ESD protection in the CMOS IC's.
UR - http://www.scopus.com/inward/record.url?scp=0032273088&partnerID=8YFLogxK
U2 - 10.1109/ICECS.1998.813332
DO - 10.1109/ICECS.1998.813332
M3 - Conference contribution
AN - SCOPUS:0032273088
T3 - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
SP - 325
EP - 328
BT - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 7 September 1998 through 10 September 1998
ER -