Electronic properties of ultrathin high-κ dielectrics studied by ballistic electron emission microscopy

H. L. Qin*, C. Troadec, K. E.J. Goh, K. Kakushima, H. Iwai, M. Bosman, K. L. Pey

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Ballistic electron emission microscopy was employed in order to investigate the electronic properties of sub-nanometer high-κ dielectrics (CeO 2 and La2O3). The authors found that such a thin dielectric sandwiched between Au and n-Si fails to exhibit the same electronic barrier as its bulk counterpart, but it can still significantly attenuate the ballistic electron transport. The authors attribute the observed smaller barrier height to quantum tunneling andor induced gap states. The results suggest that such ultrathin high-κ dielectrics in a metal-dielectric-semiconductor structure do not show a fully formed electronic barrier.

原文English
文章編號052201
期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
29
發行號5
DOIs
出版狀態Published - 九月 2011

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