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Electronic conduction properties of indium tin oxide: Single-particle and many-body transport
Juhn-Jong Lin
, Zhi Qing Li
物理研究所
研究成果
:
Review article
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同行評審
50
引文 斯高帕斯(Scopus)
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Keyphrases
Indium Tin Oxide
100%
Many-body
100%
Electronic Conduction
100%
Conduction Properties
100%
Low Carrier Concentration
66%
Banded Structure
33%
Ultrathin Films
33%
Electron-electron Interaction
33%
Liquid Helium Temperature
33%
Semiclassical
33%
Room Temperature
33%
Thick Film
33%
Coulomb
33%
Granularity
33%
Condensed Matter Physics
33%
Thermoelectric
33%
Electron Transport
33%
Wide Temperature Range
33%
New Physics
33%
Crystalline Nanowires
33%
Slow Electrons
33%
Charge Transport Properties
33%
Free Electrons
33%
Electron-phonon Relaxation
33%
Dephasing Rate
33%
Typical Metals
33%
Electronic Dynamics
33%
Technological Applications
33%
Quantum Interference
33%
Transparent Conducting Oxide
33%
Electron Diffusion
33%
Sn-doped In2O3
33%
Polycrystalline Thin Films
33%
Electrical Transport Properties
33%
Boltzmann Transport Theory
33%
Material Forming
33%
Electronic Parameters
33%
Metal Characteristics
33%
Physics Research
33%
Residual Resistance
33%
Physics
Indium
100%
Physics
100%
Transport Property
100%
Charge Transfer
100%
Electron Scattering
50%
Phonon
50%
Liquid Helium
50%
Thin Films
50%
Polycrystalline
50%
Room Temperature
50%
Condensed Matter Physics
50%
Thick Films
50%
Free Electron
50%
Thermoelectricity
50%
Nanowire
50%
Material Science
Indium Tin Oxide
100%
Carrier Concentration
18%
Thin Films
9%
Nanowire
9%
Electron Transfer
9%
Thick Films
9%
Thermoelectrics
9%
Dephasing
9%
Transparent Conducting Oxide
9%
Ultrathin Film
9%