Electronic and superconducting properties of CoSi2 films on silicon — An unconventional superconductor with technological potential

Shao Pin Chiu, Chang Jan Wang, Yi Chun Lin, Shun Tast Tu, Shouray Kumar Sahu, Ruey Tay Wang, Chih Yuan Wu, Sheng Shiuan Yeh, Stefan Kirchner, Juhn Jong Lin*

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We report the observation of unusual normal-state electronic conduction properties and superconducting characteristics of high-quality CoSi2/Si films grown on silicon Si(100) and Si(111) substrates. A good understanding of these features shall help to address the underlying physics of the unconventional pairing symmetry recently discovered in transparent CoSi2/TiSi2 heterojunctions (Chiu et al., 2021; Chiu et al., 2023), where CoSi2/Si is a superconductor with a superconducting transition temperature Tc≃ (1.1–1.5) K, dependent on its dimensions, and TiSi2 is a normal metal. In CoSi2/Si films, we find a pronounced positive magnetoresistance caused by the weak-antilocalization effect, indicating a strong Rashba spin–orbit coupling (SOC). This SOC generates two-component superconductivity in CoSi2/TiSi2 heterojunctions. The CoSi2/Si films are stable under ambient conditions and have ultralow 1/f noise. Moreover, they can be patterned via the standard lithography techniques, which might be of considerable practical value for future scalable superconducting and quantum device fabrication.

原文English
頁(從 - 到)348-363
頁數16
期刊Chinese Journal of Physics
90
DOIs
出版狀態Published - 8月 2024

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