Electronic and bonding structures of B-C-N thin films investigated by x-ray absorption and photoemission spectroscopy

S. C. Ray, H. M. Tsai, C. W. Bao, J. W. Chiou, J. C. Jan, K. P.Krishna Kumar, W. F. Pong*, M. H. Tsai, S. Chattopadhyay, L. C. Chen, S. C. Chien, M. T. Lee, S. T. Lin, K. H. Chen

*此作品的通信作者

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

The investigation of the electronic and bonding structures of B-C-N thin films was carried out using X-ray absorption near-edge structure (XANES) and valence-band photoelectron spectroscopy (PES). The intensities of the sp 2-bonded features in the CK-edge XANES spectra was observed to decrease with the increase in C concentration, whereas those in the spectra of NK-edge XANES increase with the N concentration. The decrease of the intensities of the sp2-bonded features in the C and NK-edges XANES spectra was correlated with the increase of the N/B and C/B concentration ratios and the Young's modulus. It was found that the Valence-band PES spectra were insensitive to the variations of the B and C concentrations in B-C-N compounds.

原文English
頁(從 - 到)208-211
頁數4
期刊Journal of Applied Physics
96
發行號1
DOIs
出版狀態Published - 1 7月 2004

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