摘要
We present measurements of the electronic tunneling density of states of ultrathin films with sheet resistances at 8 K in the range 100 Ω<R<100 kΩ. We find that in the strongly disordered regime the Coulomb anomaly in the tunneling density of states grows in strength with R in a manner which depends strongly on film structure. These data demonstrate that the effective electron-electron interactions in disordered films depend on film structure in this regime. We discuss the implications of this behavior for the properties of superconductors near the two-dimensional superconductor-to- insulator transition.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 16600-16604 |
| 頁數 | 5 |
| 期刊 | Physical Review B |
| 卷 | 49 |
| 發行號 | 23 |
| DOIs | |
| 出版狀態 | Published - 1994 |