摘要
This paper presents a method of characterizing the N- sigma (density - ″capture-cross-section″ ) distribution of electron traps in insulators. Requiring only voltage-time measurements made at constant currents, this method has found for oxides grown from poly-Si N reversible reaction sigma ** minus **1**. **1**6. The previously reported absence of saturation electron trapping in these oxides is explained by the high density of traps with small cross-sections. The trap density and cross-section are insensitive to the oxidation condition. The observed trapping characteristics is consistent with this density-cross-section distribution, first order rate dynamics of trapping, and unnoticeable new trap generation by field or current stressing under the test conditions.
原文 | English |
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頁面 | 229-232 |
頁數 | 4 |
DOIs | |
出版狀態 | Published - 1 1月 1979 |
事件 | Int Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA 持續時間: 3 12月 1979 → 5 12月 1979 |
Conference
Conference | Int Electron Devices Meet, 25th, Tech Dig |
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城市 | Washington, DC, USA |
期間 | 3/12/79 → 5/12/79 |