Electron-trap generation by recombination of electrons and holes in SiO2

I. C. Chen*, S. Holland, Chen-Ming Hu

*此作品的通信作者

研究成果: Article同行評審

106 引文 斯高帕斯(Scopus)

摘要

It is shown that after holes are injected and trapped in silicon dioxide (SiO2), subsequent electron injection will generate neutral electron traps. The density of electron traps generated is about 30% of the density of trapped holes. It is proposed that electron traps are created by the energy released through the recombination of electrons and holes, and that this is the mechanism of electron-trap generation during high-field oxide stressing. Similar oxide field and thickness dependencies of the rate of electron-trap generation and hole generation further support this model. This model can reconcile the main evidence for the electron-trapping oxide breakdown model with the hole-trapping breakdown model. It is consistent with the higher trap generation rate in irradiated SiO2. An analytical trapping model is derived and the electron capture cross sections of trapped holes and the generated neutral traps are found to be 10-14 cm2 and 5×10-16 cm2, respectively.

原文English
頁(從 - 到)4544-4548
頁數5
期刊Journal of Applied Physics
61
發行號9
DOIs
出版狀態Published - 1 十二月 1987

指紋

深入研究「Electron-trap generation by recombination of electrons and holes in SiO<sub>2</sub>」主題。共同形成了獨特的指紋。

引用此