Electron-phonon-impurity interference effect in disordered Au56Pd44 and IrO2 thick films

S. S. Yeh*, J. J. Lin, Jing Xiunian, Zhang Dianlin

*此作品的通信作者

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

We have fabricated a series of Au56Pd44 thick films with a wide range of residual resistivity ρ0 varying from 40to280μΩcm. The resistivities of these films were measured between 15 and 300K. We found that at temperatures below about 0.1θD (θD is the Debye temperature), the interference mechanism between the elastic electron scattering and electron-phonon scattering (the electron-phonon-impurity interference effect) contributes significantly to the measured resistivities. Our results support the current theoretical idea that this interference-mechanism-induced resistivity varies with ρ0T2, where T is the temperature. Similar observation has also been made in disordered, conducting transition-metal oxide IrO2 thick films.

原文English
文章編號024204
頁(從 - 到)2-5
頁數5
期刊Physical Review B - Condensed Matter and Materials Physics
72
發行號2
DOIs
出版狀態Published - 1 7月 2005

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